Dr. Gerald Deboy received the M.S. and Ph.D. degree in physics from the Technical University Munich in 1991 and 1996 respectively. He joined Siemens Corporate Research and Development in 1992 and the Semiconductor Division of Siemens in 1995, which became Infineon Technologies later on. His research interests were focused on the development of new device concepts for power electronics, especially the revolutionary CoolMOS™ technology. From 2004 onward he was heading the Technical marketing department for power semiconductors and ICs within the Infineon Technologies Austria AG. Since 2009 he is leading a business development group specializing in new fields for power electronics. He is a Sr. member of IEEE and has served as a member of the Technical Committee for Power Devices and Integrated Circuits within the Electron Device Society. He has authored and coauthored more than 70 papers in national and international journals including contributions to three student textbooks. He holds more than 60 granted international patents and has more applications pending.
With the commercial availability of GaN-based power devices, the positioning of the technology versus next best silicon or SiC-based alternatives is a hot topic in the industry. Reliability aspects and system benefits are key issues driving the adoption of the technology. We will discuss a number of use cases such as hyper-scale datacenter and high-density telecom power supplies to outline decision factors in favor of GaN-based solutions. We will compare performance indicators towards the next best alternatives. The talk addresses both power supply engineers as well as market analysts and trend scouts.